In addition, introducing a top-gate structure to TFTs with high-quality gate insulators can address these issues because the gate insulator film acts as a passivation film. To avoid these problems, a high-quality passivation film on the channel has been considered in order to reduce oxidation and hydrogen adsorption. However, IGZO TFTs have demonstrated rather poor characteristics and a degradation from their initial performance as a result of electron trap or carrier generation due to the adsorption of oxidation or hydrogen from the atmosphere 5, 6. In order to achieve highly reliable long-term device operation, some research groups have examined inorganic gate insulators and passivation films layered on IGZO thin films, which are fabricated using a high-temperature process 3, 4. However, achieving highly reliable devices using IGZO in a low-temperature process remains a technological challenge because IGZO deteriorates under the influence of impurities in the atmosphere or the electrical stress of applied voltages. Therefore, the use of IGZO has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. Although IGZO TFTs are produced by using a low-temperature process, they provide high field-effect mobility (μ FE) despite the amorphous phase induced under low-temperature deposition 2. In particular, TFTs based on amorphous indium–gallium–zinc oxide (IGZO) have demonstrated a field-effect mobility as high as 10 cm 2/(V∙s), which exceeds that of amorphous silicon TFTs 1. Transparent amorphous oxide semiconductor thin-film transistors (TFTs) have been widely investigated with the goal of optimally exploiting their low leakage current and transparency 1.
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